Active and fast charge-state switching of single NV centres in diamond by in-plane Al-Schottky junctions

• Christoph Schreyvogel,
• Vladimir Polyakov,
• Sina Burk,
• Helmut Fedder,
• Andrej Denisenko,
• Felipe Fávaro de Oliveira,
• Ralf Wunderlich,
• Jan Meijer,
• Verena Zuerbig,
• Jörg Wrachtrup and
• Christoph E. Nebel

Beilstein J. Nanotechnol. 2016, 7, 1727–1735, doi:10.3762/bjnano.7.165

• for quantum communication and cryptography. Keywords: active charge state control; diamond; fast charge state switching; NV centre; two-dimensional Schottky diode; Introduction The nitrogen-vacancy centre (NV centre) in diamond is known to exist in at least three different charge states (NV−, NV0

• measured background spectrum of the diamond surface (black spectrum of Figure 3), which indicates the NV centre to be in the nonfluorescent NV+ state. Fast charge-state switching In order to answer the question of how fast the charge state of a single NV centre can be switched with the two-dimensional

• corresponding NV filters in front of them. Fast charge state switching. The result of the time-resolved NV-intensity measurement shows that switching from NV− to NV+ takes place much faster than switching from NV+ to NV−. Since in this case we used an NV− filter in front of an ADP, the maximum and the minimum